cha8012 - 99f ref. : dscha80123332 - 28 nov 13 1 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 c band high power amplifier gaas monolithic microwave ic description cha8012 - 99f is a monolithic two - stage gaas high power amplifier (hpa) designed for c band applications. the hpa provides typically 12w of output power on the 5.2 to 6.0ghz frequency band associated with 43% of power added efficiency at 3db gain compression. the small si gnal gain is 22db. the overall power supply is of 8v/2.1a. the circuit is dedicated to defense and space applications and is also well suited for a wide range of microwave and millimeter wave applications and systems. this device is manufactured using 0.25m power phemt process, including via holes through the substrate and air bridges. it is available in chip form. main features main electrical characteristics tamb.= +25c, vd = + 8 v idq=2.1a pulsed mode ( conditions: length=25s period=250s ) symbol parameter min typ max unit freq frequency range 5 . 2 6 . 0 ghz gain linear gain 22 db p_3dbc omp output power @ 3db comp ression 41.5 db m pae_3db power added efficiency @ 3db comp . 43.0 % in out v+ v - stg1 stg2
cha8012 - 99f c band high power amplifi er ref.: dscha80123332 - 28 nov 13 2 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c , vd = + 8 v idq=2. 1 a pulsed mode ( conditions: length=25s period=250s ) symbol parameter min typ max unit freq frequency range 5.2 6 .0 ghz gain linear gain 22 db rlin input return loss 10 db rlout output return loss 10 db p_ 3 dbc omp output power @ 3 dbcomp 41.5 dbm pae_ 3 db power added efficiency @ 3 dbcomp 4 3 % id_ 3 db supply drain current @ 3 dbcomp 4.5 a vd1, vd2 drain supply voltage 8 v id supply quiescent current 2. 1 a vg gate supply voltage - 1.4 v a bonding wire of typically 0. 3 nh on input and out put rf port is recommended .
c band high power amplifier cha8012 - 99f ref.: dscha80123332 - 28 nov 13 3 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage 9.5 v v id drain bias current 4 a vg gate bias voltage - 5 to - 0. 6 v pin maximum peak input power overdrive +26 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage typical bias conditions tamb = +25c symbol pad n o parameter values unit v d 7, 11, 15, 19 drain supply voltage 8 v v g 6, 20 gate supply voltage - 1.4 v
cha8012 - 99f c band high power amplifi er ref.: dscha80123332 - 28 nov 13 4 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 8v , id q = 2.1 a pulsed mode pulse conditions : pulse length=25s period=250s linear gain versus frequency pout @ 3dbcomp versus frequency 25 27 29 31 33 35 37 39 41 43 45 4.8 5 5.2 5.4 5.6 5.8 6 6.2 pout (dbm) frequency (ghz) 15 16 17 18 19 20 21 22 23 24 25 4.8 5 5.2 5.4 5.6 5.8 6 6.2 linear gain (db) frequency (ghz)
c band high power amplifier cha8012 - 99f ref.: dscha80123332 - 28 nov 13 5 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 8v , id q = 2.1 a pulsed mode pulse conditions : pulse length=25s period=250s pae @ 3dbcomp versus frequency id @ 3dbcomp versus frequency 25 30 35 40 45 50 4.8 5 5.2 5.4 5.6 5.8 6 6.2 pae (%) frequency (ghz) 0 1 2 3 4 5 6 4.8 5 5.2 5.4 5.6 5.8 6 6.2 id (a) frequency (ghz)
cha8012 - 99f c band high power amplifi er ref.: dscha80123332 - 28 nov 13 6 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical d ata chip thickness: 7 0m chip size : 5610 x 4510 35m all dimensions are in micrometers rf pad (1 and13) size= 1 20 x200m2 dc pad (2 - 6 , 8 - 10, 12, 14 , 16 - 18 and 20 - 24) size= 100x100m2 dc pad ( 7 and 1 9 ) size= 1 85 x1 00 m2 dc pad (11 and 15) size= 360x100m2 pin number pin name description 1 in rf i nput 6, 20 g1a vg1& vg2 7 , 19 d 1 v d 1 11, 15 d2 vd2 5, 10, 12, 14, 16, 21 gnd not connected 2, 3, 4, 8, 9, 17, 18, 22, 23, 24 not connected 1 3 out rf output 1 13 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 5 610 4 510 000 000 218 418 598 778 933 1 143 1 388 1 748 1 998 5 022 5 351 107 2 255 2 448 2 062 115 4 404 218 418 598 778 933 1 143 1 388 1 748 1 998 5 022 5 351 2 446 2 253 2 060 5 496
c band high power amplifier cha8012 - 99f ref.: dscha80123332 - 28 nov 13 7 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly p lan note: 25m - diamet er gold wire and 25m - wedge bonding are preferred . recommended circuit bonding t able label type decoupling comment d 1, d2 vd 100pf drain supply g1a vg 100pf & 10n f gate supply in input rf n/a inductance~0. 3 nh ( two golden bonding wire s with ~700 m length and 25 m diameter) out output rf n/a inductance~0.3nh (two golden bonding wires with ~700 m length and 25 m diameter) 100pf 100pf 100pf 100pf 100pf 100pf 10nf 10nf
cha8012 - 99f c band high power amplifi er ref.: dscha80123332 - 28 nov 13 8 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with t he regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form: cha8012 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
|
